Microcrystalline silicon thin film solar cell and the manufacturing method thereof

ABSTRACT

The present invention relates to a microcrystalline silicon thin film solar cell and the manufacturing method thereof, using which not only the crystallinity of a microcrystalline silicon thin film that is to be formed by the manufacturing method can be controlled and adjusted at will and the defects in the microcrystalline silicon thin film can be fixed, but also the device characteristic degradation due to chamber contamination happening in the manufacturing process, such as plasma enhanced chemical vapor deposition (PECVD), can be eliminated effectively.

FIELD OF THE INVENTION

The present invention relates to a thin film and a method formanufacturing a thin film device, and more particularly, to amicrocrystalline silicon thin film solar cell and the manufacturingmethod thereof.

BACKGROUND OF THE INVENTION

Global warming is the rise in the average temperature of Earth'satmosphere and oceans since the late 19th century that it is primarilycaused by increasing concentrations of greenhouse gases produced byhuman activities such as the burning of fossil fuels and deforestation.Recently, warming of the climate system is unequivocal and has becomeperhaps the most complicated issue facing world leaders. Thus, there aremore and more clean energy projects being proposed and developed, andamong which, solar cells for converts light energy into electricalenergy are most promising since the photovoltaic process will notreleases any CO2, SO2, or NO2 gases which don't contribute to globalwarming. Moreover, Building-integrated photovoltaics (BIPV), which arephotovoltaic materials used to replace conventional building materialsin parts of the building envelope such as the roof, skylights, orfacades, are increasingly being incorporated into the construction ofnew buildings. The use of BIPV had increased by 48.7% from 181.6 MW atYear 2009 to 270.1 MW at Year 2010, and at Year 2011, it had increasedby 60% to 433 MW. In addition, the BIPV market is expended to growcontinuously to 1867.5 MW at Year 2015, which is more than 10 times theamount of BIPV used at Year 2009. According to EPIA, at Year 2020, thetotal production of solar energy can reach 139 billion Euros.Nevertheless, since both solar power industry and semiconductor industryneed to use a lot of silicon material, the shortage of silicon materialis inevitable and expected. Consequently, thin film solar cells whichcan be formed in a thickness less than several nanometers are expectedto become the star-product in solar power industry. In recent years,there are many means of plasma-enhanced chemical vapor deposition(PECVD) being developed to be used for manufacturing large area thinfilm silicon solar cells. Generally, a common thin film cell is athree-layered P-I-N structure that is composed of a layer of intrinsicsemiconductor sandwiched between a layer of hole-based siliconsemiconductor, such as a p-type Si, and a layer of electron-basedsilicon semiconductor, such as a n-type Si, whereas such three-layeredthin film solar cells are formed by a PECVD means. Moreover, it is notedthat microcrystalline silicon has been recognized as useful thin-filmsemiconductor for solar cells since the efficiency of such thin filmsolar cell can be greatly enhanced thereby.

SUMMARY OF THE INVENTION

Conventionally, for producing high quality microcrystalline silicon thinfilm with high deposition rate, a means of VHF plasma-enhanced processof high processing pressure and high plasma power is developed and used.However, the device characteristic degradation due to chambercontamination and defected thin film deposition is almost inevitable insuch high processing pressure and high plasma power manufacturingprocess.

Therefore, it is intended to develop a manufacturing process capable ofpreventing the aforesaid problems of chamber contamination and defectedthin film deposition, while without causing any increasing in overallmanufacture cost.

Accordingly, the manufacturing method of the present invention shouldhave the following characteristics:

-   -   (1) It is a novel microcrystalline silicon thin film solar cell        and the manufacturing method thereof.    -   (2) By forming multiple layers of microcrystalline silicon thin        film respectively in different chambers using different plasma        sources, the quality of so-achieved microcrystalline silicon        thin film is improved.    -   (3) It is a manufacturing method capable of effectively        eliminating device characteristic degradation due to chamber        contamination happening in the manufacturing process.

In an exemplary embodiment, the present invention provides a method formanufacturing a microcrystalline silicon thin film solar cell, whichcomprises the steps of: using a means of physical vapor deposition (PVD)to form a layer of transparent conducting oxide (TCO) and thus define apattern on a substrate; using a means of plasma-enhanced chemical vapordeposition (PECVD) to form a layer of hole-based silicon semiconductor,such as a p-type Si, on the layer of TCO in a first process chamberwhile enabling the layer of hole-based silicon semiconductor to be usedas a hole-based ohmic contact layer; using a means of plasma-enhancedchemical vapor deposition (PECVD) to form a first layer of intrinsicmicrocrystalline silicon semiconductor, such as a μ-Si, on the layer ofhole-based silicon semiconductor in the first process chamber whileenabling the first layer of intrinsic microcrystalline siliconsemiconductor to be used as a light absorption layer; using a means ofplasma-enhanced chemical vapor deposition (PECVD) under a condition ofhigh processing pressure and high plasma power to form a second layer ofintrinsic microcrystalline silicon semiconductor, such as a μ-Si, on thefirst layer of intrinsic microcrystalline silicon semiconductor in asecond process chamber while enabling the second layer of intrinsicmicrocrystalline silicon semiconductor to be used also as a lightabsorption layer; using a means of plasma-enhanced chemical vapordeposition (PECVD) to form a third layer of intrinsic microcrystallinesilicon semiconductor, such as a μ-Si, on the second layer of intrinsicmicrocrystalline silicon semiconductor in a third process chamber whileenabling the second layer of intrinsic microcrystalline siliconsemiconductor to be used also as a light absorption layer; using a meansof plasma-enhanced chemical vapor deposition (PECVD) to form a layer ofelectron-based silicon semiconductor, such as a n-type Si, in a patternon the third layer of intrinsic microcrystalline silicon semiconductorin the third process chamber while enabling the layer of electron-basedsilicon semiconductor to be used also as an electron-based ohmic contactlayer; and using a means of physical vapor deposition (PVD) to form aconductive metal layer in a pattern on the layer of electron-basedsilicon semiconductor while enabling the conductive metal layer to beused as a back electrode, and thereby, achieving a P-I-N structure.

In another exemplary embodiment, the present invention provides amicrocrystalline silicon thin film solar cell, which comprises: asubstrate, being used as the bottom layer of the microcrystallinesilicon thin film solar cell; a layer of transparent conducting oxide(TCO), disposed on the substrate; a layer of hole-based siliconsemiconductor, such as a p-type Si, disposed on the layer of TCO; afirst layer of intrinsic microcrystalline silicon semiconductor, such asa μ-Si, disposed on the layer of hole-based silicon semiconductor; asecond layer of intrinsic microcrystalline silicon semiconductor, suchas a μ-Si, disposed on the first layer of intrinsic microcrystallinesilicon semiconductor; a third layer of intrinsic microcrystallinesilicon semiconductor, such as a μ-Si, disposed on the second layer ofintrinsic microcrystalline silicon semiconductor; a layer ofelectron-based silicon semiconductor, such as a n-type Si, disposed onthe third layer of intrinsic microcrystalline silicon semiconductor; anda conductive metal layer, disposed on the layer of electron-basedsilicon semiconductor.

Further scope of applicability of the present application will becomemore apparent from the detailed description given hereinafter. However,it should be understood that the detailed description and specificexamples, while indicating preferred embodiments of the invention, aregiven by way of illustration only, since various changes andmodifications within the spirit and scope of the invention will becomeapparent to those skilled in the art from this detailed description.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will become more fully understood from thedetailed description given herein below and the accompanying drawingswhich are given by way of illustration only, and thus are not limitativeof the present invention and wherein:

FIG. 1 is a schematic diagram showing a process chamber used in amanufacturing method of the present invention.

FIG. 2 is a schematic diagram showing a microcrystalline silicon thinfilm solar cell according to an embodiment of the invention.

FIG. 3 is a flow chart showing the steps performed in a manufacturingmethod of the present invention.

DESCRIPTION OF THE EXEMPLARY EMBODIMENTS

For your esteemed members of reviewing committee to further understandand recognize the fulfilled functions and structural characteristics ofthe invention, several exemplary embodiments cooperating with detaileddescription are presented as the follows.

The present invention relates to a novel microcrystalline silicon thinfilm solar cell and the manufacturing method thereof, which is capableof effectively preventing chamber contamination during film depositionfrom happening in the high processing pressure and high plasma powerPECVD process, and simultaneously enabling the multiple layers ofmicrocrystalline silicon thin film respectively in different chambersusing different plasma sources while allowing the crystallinity as wellas the structure of a microcrystalline silicon thin film that is to beformed by the manufacturing method to be controlled and adjusted atwill.

Please refer to FIG. 3, which is a flow chart showing the stepsperformed in a manufacturing method of the present invention. As shownin FIG. 3, the manufacturing method of the present invention comprisesthe steps of: using a means of physical vapor deposition (PVD) to form alayer of transparent conducting oxide (TCO) 21 and thus define a patternon a substrate 20; using a means of plasma-enhanced chemical vapordeposition (PECVD) to form a layer of hole-based silicon semiconductor22, such as a p-type Si, on the layer of TCO 21 in a first processchamber 11 while enabling the layer of hole-based silicon semiconductor22 to be used as a hole-based ohmic contact layer; using a means ofplasma-enhanced chemical vapor deposition (PECVD) to form a first layerof intrinsic microcrystalline silicon semiconductor 23, such as a μ-Si,on the layer of hole-based silicon semiconductor 22 in the first processchamber 11 while enabling the first layer of intrinsic microcrystallinesilicon semiconductor 23 to be used as a light absorption layer; using ameans of plasma-enhanced chemical vapor deposition (PECVD) under acondition of high processing pressure and high plasma power to form asecond layer of intrinsic microcrystalline silicon semiconductor 24,such as a μ-Si, on the first layer of intrinsic microcrystalline siliconsemiconductor 23 in a second process chamber 12 while enabling thesecond layer of intrinsic microcrystalline silicon semiconductor 24 tobe used also as a light absorption layer; using a means ofplasma-enhanced chemical vapor deposition (PECVD) to form a third layerof intrinsic microcrystalline silicon semiconductor 25, such as a μ-Si,on the second layer of intrinsic microcrystalline silicon semiconductor24 in a third process chamber 13 while enabling the second layer ofintrinsic microcrystalline silicon semiconductor 25 to be used also as alight absorption layer; using a means of plasma-enhanced chemical vapordeposition (PECVD) to form a layer of electron-based siliconsemiconductor 26, such as a n-type Si, in a pattern on the third layerof intrinsic microcrystalline silicon semiconductor 25 in the thirdprocess chamber 13 while enabling the layer of electron-based siliconsemiconductor 26 to be used also as an electron-based ohmic contactlayer; and using a means of physical vapor deposition (PVD) to form aconductive metal layer 27 in a pattern on the layer of electron-basedsilicon semiconductor 26 while enabling the conductive metal layer 27 tobe used as a back electrode, and thereby, achieving a P-I-N structure.

Please refer to FIG. 2, which is a schematic diagram showing amicrocrystalline silicon thin film solar cell according to an embodimentof the invention. As shown in FIG. 2, the means of PECVD in the firstprocess chamber 11 is performed using a first plasma source, whereas thefirst plasma source is capable of providing at least one type of plasma;and the first plasma source is a very high frequency (VHF) plasmasource, featured by a frequency selected from the group consisting of:13.56 MHz, 27.12 MHz, 40 MHz and those higher than 40 MHz. Similarly,the means of PECVD in the second process chamber 12 is performed using asecond plasma source; the second plasma source is capable of providingat least one type of plasma; and the first plasma source is a very highfrequency (VHF) plasma source, featured by a frequency selected from thegroup consisting of: 13.56 MHz, 27.12 MHz, 40 MHz and those higher than40 MHz; and the means of PECVD in the third process chamber 13 isperformed using a third plasma source; the third plasma source iscapable of providing at least one type of plasma; and the first plasmasource is a very high frequency (VHF) plasma source, featured by afrequency selected from the group consisting of: 13.56 MHz, 27.12 MHz,40 MHz and those higher than 40 MHz. Moreover, during the forming of thesecond layer of intrinsic microcrystalline silicon semiconductor 24 onthe first layer of intrinsic microcrystalline silicon semiconductor 23in the second process chamber 12 using the second plasma source, anydefect in the first layer of intrinsic microcrystalline siliconsemiconductor 23 is remedied and repaired for enhancing the quality ofthe resulting microcrystalline thin film. It is noted that the firstlayer of intrinsic microcrystalline silicon semiconductor 23 not onlycan be used as a light absorption layer, it can also be used forpreventing chamber contamination from happening in the high pressure,high power manufacturing process. In addition, the substrate 20 is asubstrate selected from the group consisting of: a glass and a flexiblethermal-resistant substrate; and the first process chamber 11 isconnected to the second process chamber 12, and the second processchamber 12 is connected to the third process chamber 13, while the thirdprocess chamber 13 is connected to a vacuumed load-lock chamber. It isnoted that the load-lock chamber is being vacuumed after having a sampledisposed therein, and then after to a specific degree of vacuum isreached, the sample is then ready to be transported for processing.Accordingly, the crystallinity of the layer of intrinsicmicrocrystalline silicon semiconductor that is to be formed in themanufacturing method can be adjusted and controlled so as to allow thelayer of hole-based silicon semiconductor to be formed with higherenergy gap (Eg).

Please refer to FIG. 1, which is a schematic diagram showing a processchamber used in a manufacturing method of the present invention. Asshown in FIG. 1, the present invention provides a microcrystallinesilicon thin film solar cell, which comprises: a substrate 20, beingused as the bottom layer of the microcrystalline silicon thin film solarcell; a layer of transparent conducting oxide (TCO) 21, disposed on thesubstrate 20; a layer of hole-based silicon semiconductor 22, such as ap-type Si, disposed on the layer of TCO 21; a first layer of intrinsicmicrocrystalline silicon semiconductor 23, such as a μ-Si, disposed onthe layer of hole-based silicon semiconductor 22; a second layer ofintrinsic microcrystalline silicon semiconductor 24, such as a μ-Si,disposed on the first layer of intrinsic microcrystalline siliconsemiconductor 23; a third layer of intrinsic microcrystalline siliconsemiconductor 25, such as a μ-Si, disposed on the second layer ofintrinsic microcrystalline silicon semiconductor 24; a layer ofelectron-based silicon semiconductor 26, such as a n-type Si, disposedon the third layer of intrinsic microcrystalline silicon semiconductor25; and a conductive metal layer 27, disposed on the layer ofelectron-based silicon semiconductor 26. It is noted that the layer ofTCO 21 is formed in a pattern on the substrate 20 by a means of physicalvapor deposition (PVD); the layer of hole-based silicon semiconductor 22is formed on the layer of TCO 21 in the first process chamber 11 by ameans of plasma-enhanced chemical vapor deposition (PECVD), and thelayer of hole-based silicon semiconductor is used as a hole-based ohmiccontact layer; the first layer of intrinsic microcrystalline siliconsemiconductor 23 is formed on the layer of hole-based siliconsemiconductor 22 in the first process chamber 11 by a means ofplasma-enhanced chemical vapor deposition (PECVD), and the first layerof intrinsic microcrystalline silicon semiconductor 23 is used as alight absorption layer; the second layer of intrinsic microcrystallinesilicon semiconductor 24 is formed on the first layer of intrinsicmicrocrystalline silicon semiconductor 23 in the second process chamber12 by a means of plasma-enhanced chemical vapor deposition (PECVD) undera condition of high process pressure and high plasma power, and thesecond layer of intrinsic microcrystalline silicon semiconductor 24 isused as a light absorption layer; the third layer of intrinsicmicrocrystalline silicon semiconductor 25 is formed on the second layerof intrinsic microcrystalline silicon semiconductor 24 in the thirdprocess chamber 13 by a means of plasma-enhanced chemical vapordeposition (PECVD), and the third layer of intrinsic microcrystallinesilicon semiconductor 25 is used as a light absorption layer; the layerof electron-based silicon semiconductor 26 is formed in a pattern on thethird layer of intrinsic microcrystalline silicon semiconductor 25 inthe third process chamber 13 by a means of plasma-enhanced chemicalvapor deposition (PECVD), and the layer of electron-based siliconsemiconductor 26 is used as an electron-based ohmic contact layer; andthe conductive metal layer 27 is formed in a pattern on the layer ofelectron-based silicon semiconductor 26 by a means of physical vapordeposition (PVD), and the conductive metal layer 27 is used as a backelectrode, and thereby, a P-I-N structure is achieved.

Similarly, the means of PECVD in the first process chamber 11 isperformed using a first plasma source, whereas the first plasma sourceis capable of providing at least one type of plasma; and the firstplasma source is a very high frequency (VHF) plasma source, featured bya frequency selected from the group consisting of: 13.56 MHz, 27.12 MHz,40 MHz and those higher than 40 MHz. Similarly, the means of PECVD inthe second process chamber 12 is performed using a second plasma source;the second plasma source is capable of providing at least one type ofplasma; and the first plasma source is a very high frequency (VHF)plasma source, featured by a frequency selected from the groupconsisting of: 13.56 MHz, 27.12 MHz, 40 MHz and those higher than 40MHz; and the means of PECVD in the third process chamber 13 is performedusing a third plasma source; the third plasma source is capable ofproviding at least one type of plasma; and the first plasma source is avery high frequency (VHF) plasma source, featured by a frequencyselected from the group consisting of: 13.56 MHz, 27.12 MHz, 40 MHz andthose higher than 40 MHz. Moreover, during the forming of the secondlayer of intrinsic microcrystalline silicon semiconductor 24 on thefirst layer of intrinsic microcrystalline silicon semiconductor 23 inthe second process chamber 12 using the second plasma source, any defectin the first layer of intrinsic microcrystalline silicon semiconductor23 is remedied and repaired for enhancing the quality of the resultingmicrocrystalline thin film. It is noted that the first layer ofintrinsic microcrystalline silicon semiconductor 23 not only can be usedas a light absorption layer, it can also be used for preventing chambercontamination from happening in the high pressure, high powermanufacturing process. In addition, the substrate 20 is a substrateselected from the group consisting of: a glass and a flexiblethermal-resistant substrate; and the first process chamber 11 isconnected to the second process chamber 12, and the second processchamber 12 is connected to the third process chamber 13, while the thirdprocess chamber 13 is connected to a vacuumed load-lock chamber. It isnoted that the load-lock chamber is being vacuumed after having a sampledisposed therein, and then after to a specific degree of vacuum isreached, the sample is then ready to be transported for processing.

With respect to the above description then, it is to be realized thatthe optimum dimensional relationships for the parts of the invention, toinclude variations in size, materials, shape, form, function and mannerof operation, assembly and use, are deemed readily apparent and obviousto one skilled in the art, and all equivalent relationships to thoseillustrated in the drawings and described in the specification areintended to be encompassed by the present invention.

What is claimed is:
 1. A method for manufacturing a microcrystalline silicon thin film solar cell, comprising the steps of: using a means of physical vapor deposition (PVD) to form a layer of transparent conducting oxide (TCO) and thus define a pattern on a substrate; using a means of plasma-enhanced chemical vapor deposition (PECVD) to form a layer of hole-based silicon semiconductor, such as a p-type Si, on the layer of TCO in a first process chamber while enabling the layer of hole-based silicon semiconductor to be used as a hole-based ohmic contact layer; using a means of plasma-enhanced chemical vapor deposition (PECVD) to form a first layer of intrinsic microcrystalline silicon semiconductor, such as a μ-Si, on the layer of hole-based silicon semiconductor in the first process chamber while enabling the first layer of intrinsic microcrystalline silicon semiconductor to be used as a light absorption layer; using a means of plasma-enhanced chemical vapor deposition (PECVD) under a condition of high processing pressure and high plasma power to form a second layer of intrinsic microcrystalline silicon semiconductor, such as a μ-Si, on the first layer of intrinsic microcrystalline silicon semiconductor in a second process chamber while enabling the second layer of intrinsic microcrystalline silicon semiconductor to be used also as a light absorption layer; using a means of plasma-enhanced chemical vapor deposition (PECVD) to form a third layer of intrinsic microcrystalline silicon semiconductor, such as a μ-Si, on the second layer of intrinsic microcrystalline silicon semiconductor in a third process chamber while enabling the second layer of intrinsic microcrystalline silicon semiconductor to be used also as a light absorption layer; using a means of plasma-enhanced chemical vapor deposition (PECVD) to form a layer of electron-based silicon semiconductor, such as a n-type Si, in a pattern on the third layer of intrinsic microcrystalline silicon semiconductor in the third process chamber while enabling the layer of electron-based silicon semiconductor to be used also as an electron-based ohmic contact layer; and using a means of physical vapor deposition (PVD) to form a conductive metal layer in a pattern on the layer of electron-based silicon semiconductor while enabling the conductive metal layer to be used as a back electrode, and thereby, achieving a P-I-N structure.
 2. The manufacturing method of claim 1, wherein the means of PECVD in the first process chamber is performed using a first plasma source; the first plasma source is capable of providing at least one type of plasma; and the first plasma source is a very high frequency (VHF) plasma source, featured by a frequency selected from the group consisting of: 13.56 MHz, 27.12 MHz, 40 MHz and those higher than 40 MHz.
 3. The manufacturing method of claim 1, wherein the means of PECVD in the second process chamber is performed using a second plasma source; the second plasma source is capable of providing at least one type of plasma; and the first plasma source is a very high frequency (VHF) plasma source, featured by a frequency selected from the group consisting of: 13.56 MHz, 27.12 MHz, 40 MHz and those higher than 40 MHz.
 4. The manufacturing method of claim 1, wherein the means of PECVD in the third process chamber is performed using a third plasma source; the third plasma source is capable of providing at least one type of plasma; and the first plasma source is a very high frequency (VHF) plasma source, featured by a frequency selected from the group consisting of: 13.56 MHz, 27.12 MHz, 40 MHz and those higher than 40 MHz.
 5. The manufacturing method of claim 1, wherein during the forming of the second layer of intrinsic microcrystalline silicon semiconductor on the first layer of intrinsic microcrystalline silicon semiconductor in the second process chamber using the second plasma source, any defect in the first layer of intrinsic microcrystalline silicon semiconductor is remedied and repaired.
 6. The manufacturing method of claim 1, wherein the substrate is a substrate selected from the group consisting of: a glass and a flexible thermal-resistant substrate.
 7. The manufacturing method of claim 1, wherein the first process chamber is connected to the second process chamber, and the second process chamber is connected to the third process chamber, while the third process chamber is connected to a vacuumed load-lock chamber.
 8. A microcrystalline silicon thin film solar cell, comprising: a substrate, being used as the bottom layer of the microcrystalline silicon thin film solar cell; a layer of transparent conducting oxide (TCO), disposed on the substrate; a layer of hole-based silicon semiconductor, such as a p-type Si, disposed on the layer of TCO; a first layer of intrinsic microcrystalline silicon semiconductor, such as a μ-Si, disposed on the layer of hole-based silicon semiconductor; a second layer of intrinsic microcrystalline silicon semiconductor, such as a μ-Si, disposed on the first layer of intrinsic microcrystalline silicon semiconductor; a third layer of intrinsic microcrystalline silicon semiconductor, such as a μ-Si, disposed on the second layer of intrinsic microcrystalline silicon semiconductor; a layer of electron-based silicon semiconductor, such as a n-type Si, disposed on the third layer of intrinsic microcrystalline silicon semiconductor; and a conductive metal layer, disposed on the layer of electron-based silicon semiconductor.
 9. The microcrystalline silicon thin film solar cell of claim 8, wherein the layer of TCO is formed in a pattern on the substrate by a means of physical vapor deposition (PVD).
 10. The microcrystalline silicon thin film solar cell of claim 8, wherein the layer of hole-based silicon semiconductor is formed on the layer of TCO in a first process chamber by a means of plasma-enhanced chemical vapor deposition (PECVD), and the layer of hole-based silicon semiconductor is used as a hole-based ohmic contact layer.
 11. The microcrystalline silicon thin film solar cell of claim 8, wherein the first layer of intrinsic microcrystalline silicon semiconductor is formed on the layer of hole-based silicon semiconductor in a first process chamber by a means of plasma-enhanced chemical vapor deposition (PECVD), and the first layer of intrinsic microcrystalline silicon semiconductor is used as a light absorption layer.
 12. The microcrystalline silicon thin film solar cell of claim 8, wherein the second layer of intrinsic microcrystalline silicon semiconductor is formed on the first layer of intrinsic microcrystalline silicon semiconductor in a second process chamber by a means of plasma-enhanced chemical vapor deposition (PECVD) under a condition of high process pressure and high plasma power, and the second layer of intrinsic microcrystalline silicon semiconductor is used as a light absorption layer.
 13. The microcrystalline silicon thin film solar cell of claim 8, wherein the third layer of intrinsic microcrystalline silicon semiconductor is formed on the second layer of intrinsic microcrystalline silicon semiconductor in a third process chamber by a means of plasma-enhanced chemical vapor deposition (PECVD), and the third layer of intrinsic microcrystalline silicon semiconductor is used as a light absorption layer.
 14. The microcrystalline silicon thin film solar cell of claim 8, wherein the layer of electron-based silicon semiconductor is formed in a pattern on the third layer of intrinsic microcrystalline silicon semiconductor in the third process chamber by a means of plasma-enhanced chemical vapor deposition (PECVD), and the layer of electron-based silicon semiconductor is used as an electron-based ohmic contact layer.
 15. The microcrystalline silicon thin film solar cell of claim 8, wherein the conductive metal layer is formed in a pattern on the layer of electron-based silicon semiconductor by a means of physical vapor deposition (PVD), and the conductive metal layer is used as a back electrode, and thereby, a P-I-N structure is achieved.
 16. The microcrystalline silicon thin film solar cell of claim 8, wherein the means of PECVD in the first process chamber is performed using a first plasma source; the first plasma source is capable of providing at least one type of plasma; and the first plasma source is a very high frequency (VHF) plasma source, featured by a frequency selected from the group consisting of: 13.56 MHz, 27.12 MHz, 40 MHz and those higher than 40 MHz.
 17. The microcrystalline silicon thin film solar cell of claim 8, wherein the means of PECVD in the second process chamber is performed using a second plasma source; the second plasma source is capable of providing at least one type of plasma; and the second plasma source is a very high frequency (VHF) plasma source, featured by a frequency selected from the group consisting of: 13.56 MHz, 27.12 MHz, 40 MHz and those higher than 40 MHz.
 18. The microcrystalline silicon thin film solar cell of claim 8, wherein the means of PECVD in the third process chamber is performed using a third plasma source; the third plasma source is capable of providing at least one type of plasma; and the third plasma source is a very high frequency (VHF) plasma source, featured by a frequency selected from the group consisting of: 13.56 MHz, 27.12 MHz, 40 MHz and those higher than 40 MHz.
 19. The microcrystalline silicon thin film solar cell of claim 8, wherein during the forming of the second layer of intrinsic microcrystalline silicon semiconductor on the first layer of intrinsic microcrystalline silicon semiconductor in the second process chamber using the second plasma source, any defect in the first layer of intrinsic microcrystalline silicon semiconductor is remedied and repaired.
 20. The microcrystalline silicon thin film solar cell of claim 8, wherein the substrate is a substrate selected from the group consisting of: a glass and a flexible thermal-resistant substrate.
 21. The microcrystalline silicon thin film solar cell of claim 10, wherein the first process chamber is connected to the second process chamber, and the second process chamber is connected to the third process chamber, while the third process chamber is connected to a vacuumed load-lock chamber.
 22. The microcrystalline silicon thin film solar cell of claim 11, wherein the first process chamber is connected to the second process chamber, and the second process chamber is connected to the third process chamber, while the third process chamber is connected to a vacuumed load-lock chamber.
 23. The microcrystalline silicon thin film solar cell of claim 12, wherein the first process chamber is connected to the second process chamber, and the second process chamber is connected to the third process chamber, while the third process chamber is connected to a vacuumed load-lock chamber.
 24. The microcrystalline silicon thin film solar cell of claim 13, wherein the first process chamber is connected to the second process chamber, and the second process chamber is connected to the third process chamber, while the third process chamber is connected to a vacuumed load-lock chamber.
 25. The microcrystalline silicon thin film solar cell of claim 14, wherein the first process chamber is connected to the second process chamber, and the second process chamber is connected to the third process chamber, while the third process chamber is connected to a vacuumed load-lock chamber. 